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| POWERTR MOSFET GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. IRF640 FEATURES Silicon Gate for Fast Switching Speeds Low RDS(on) to Minimize On-Losses. Specified at Elevated Temperature Rugged - SOA is Power Dissipation Limited Source-to-Drain Characterized for Use With Inductive Loads PIN CONFIGURATION TO-220 SYMBOL Front View D GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET ORDERING INFORMATION Part Number Package .....................IRF640...............................................TO-220 ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Continuous Pulsed Gate-to-Source Voltage Total Power Dissipation Derate above 25 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds (1) Pulse Width and frequency is limited by TJ(max) and thermal response TJ = 25 (VDD = 100V, VGS = 10V, IL = 18A, L = 1.38mH, RG = 25 ) JC JA Symbol ID IDM VGS VGSM PD TJ, TSTG EAS Value 18 72 20 40 125 1.00 -55 to 150 224 1.00 62.5 260 Unit A V V W W/ mJ /W Continue Non-repetitive TL Page 1 POWER MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25 . CIRF640 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) Drain-Source Leakage Current (VDS = Rated VDSS, VGS = 0 V) (VDS = 0.8Rated VDSS, VGS = 0 V, TJ = 125 ) Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) Gate Threshold Voltage (VDS = VGS, ID = 250 A) Static Drain-Source On-Resistance (VGS = 10 V, ID = 10A) * Drain-Source On-Voltage (VGS = 10 V) (ID = 5.0 A) Forward Transconductance (VDS = 50 V, ID = 10 A) * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD = 30 V, ID = 10 A, VGS = 10 V, RG = 4.7 ) * (VDS = 0.8Rated VDSS, ID = Rated ID, VGS = 10 V)* Symbol V(BR)DSS IDSS 0.025 1.0 IGSSF IGSSR VGS(th) RDS(on) VDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS 36 16 26 4.5 7.5 6.8 1600 750 300 30 60 80 60 63 2.0 100 100 4.0 0.18 6.0 V mhos pF pF pF ns ns ns ns nC nC nC nH nH nA nA V Min 200 Typ Max Units V mA IRF640 Internal Drain Inductance (Measured from the drain lead 0.25" from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25" from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = Rated ID, dIS/dt = 100A/s) VSD ton trr ** 450 1.5 V ns ns * Pulse Test: Pulse Width 300s, Duty Cycle ** Negligible, Dominated by circuit inductance 2% Page 2 POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS IRF640 Page 3 POWER MOSFET IRF640 Page 4 POWER MOSFET IRF640 Page 5 POWER MOSFET PACKAGE DIMENSION TO-220 D A c1 IRF640 F E PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E1 A A1 b b1 c c1 D E E1 e e1 F L L1 L1 L e b1 e1 Front View b A1 c Side View Page 6 |
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